Transistor power MJ802G NPN 100V 30A TO-3
-12%
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Configuration: Single
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 100 V
Collector- Emitter Voltage VCEO Max: 90 V
Emitter- Base Voltage VEBO: 4 V
Collector-Emitter Saturation Voltage: 0.8 V
Maximum DC Collector Current: 30 A
Gain Bandwidth Product fT: 2 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: Through Hole
Package/Case: TO-204-2 (TO-3)
DC Collector/Base Gain hFE Min: 25
Maximum Power Dissipation: 200 W
Minimum Operating Temperature: - 65 C
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 100 V
Collector- Emitter Voltage VCEO Max: 90 V
Emitter- Base Voltage VEBO: 4 V
Collector-Emitter Saturation Voltage: 0.8 V
Maximum DC Collector Current: 30 A
Gain Bandwidth Product fT: 2 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: Through Hole
Package/Case: TO-204-2 (TO-3)
DC Collector/Base Gain hFE Min: 25
Maximum Power Dissipation: 200 W
Minimum Operating Temperature: - 65 C
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Ref Code: 038445
Διακόπτης rocker μίνι ΟΝ-OFF 16A 250V 2P χωρίς λυχνία μαύρος 1X1 B/B''0-'' RK2-46 SOKEN
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