Transistor MOSFET N-CHANNEL 800V 2.7A TO-220-3 STP5NK80Z STMicroelectronics
-10%
Προβολή
SPECIFICATION
Type of transistor N-MOSFET
Technology SuperMesh™
Polarisation unipolar
Drain-source voltage 800V
Drain current 2.7A
Power dissipation 110W
Case TO220-3
Gate-source voltage ±30V
On-state resistance 2400mΩ
Mounting THT
Kind of package tube
Kind of channel enhanced
Features of semiconductor devices ESD protected gate
