Transistor Mosfet FQP19N20C 200V N-Channel Advance Q-FET
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Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Vgs - Gate-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 19 A
Rds On - Drain-Source Resistance: 170 mOhms
Configuration: Single
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 139 W
Mounting Style: Through Hole
Package/Case: TO-220-3
Packaging: Tube
Brand: Fairchild Semiconductor
Channel Mode: Enhancement
Fall Time: 115 ns
Forward Transconductance - Min: 10.8 S
Minimum Operating Temperature: - 55 C
Rise Time: 150 ns
Typical Turn-Off Delay Time: 135 ns
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Ref Code: 038445
Διακόπτης rocker μίνι ΟΝ-OFF 16A 250V 2P χωρίς λυχνία μαύρος 1X1 B/B''0-'' RK2-46 SOKEN
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