Transistor MOSFETs TO-220-3 pnp IRF9610Pbf Vishay Semiconductors
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Specificatuion.
Product : MOSFETs
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 1.8 A
Rds On - Drain-Source Resistance: 3 Ohms
Vgs - Gate-Source Voltage: - 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 11 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 20 W
Channel Mode: Enhancement
Packaging: Tube
Configuration: Single
Fall Time: 8 ns
Rise Time: 15 ns
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 10 ns
Typical Turn-On Delay Time: 8 ns
Width: 4.7 mm
Height: 15.49 mm
Length: 10.41 mm
Unit Weight: 3gr


















