Transistor Mosfet TO-220AB-3 IRF530PBF
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Specifications
Mounting Style: Through Hole
Package/Case: TO-220AB-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 14 A
Rds On - Drain-Source Resistance: 160 mOhms
Vgs th - Gate-Source Threshold Voltage: 2 V
Vgs - Gate-Source Voltage: 20 V
Qg - Gate Charge: 26 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Configuration: Single
Pd - Power Dissipation: 88 W
Channel Mode: Enhancement
Forward Transconductance - Min: 5.1 S
Fall Time: 24 ns
Rise Time: 34 ns
Typical Turn-Off Delay Time: 23 ns
Typical Turn-On Delay Time: 10 ns
Ref Code: 004845
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Τρανζίστορ πυριτίου
Τύπος: PNP-Darlington
TO-220AB
- Max. Τάση: 100V
- Max. Τρέχουσα: 5A
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Ref Code: 004109
Specifications:
Mounting Style: Through Hole
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Vr - Reverse Voltage: 800 V
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