Transistor N-Ch 100V 9.2A TO-220AB IRF520 Vishay
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IRF520, Power MOSFET
Description:
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
Features:
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- 175 °C Operating Temperature
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC
Electrical values
UDS 100 V
Id 9.2 A
RDS(on) 270 mOhm
Ptot 60 W
td (on) 8.8
td (off) 8.8
fT 2 MHz
