Transistor 2SA1941 Bipolar TO-3PN BJT PNP VCEO -140V 70-W DC -10A 100W
Προβολή
Mounting Style: Through Hole
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: - 140 V
Collector- Base Voltage VCBO: - 140 V
Emitter- Base Voltage VEBO: - 5 V
Collector-Emitter Saturation Voltage: 2 V
Gain Bandwidth Product fT: 30 MHz
Maximum Operating Temperature: + 150 C
Continuous Collector Current: 10 A
DC Collector/Base Gain hFE Min: 35
DC Current Gain hFE Max: 83
Pd - Power Dissipation: 100 W
Technology: Si
