Transistor BJT NPN 15A 60V TO-204-2 2N3055 onsemi
-27%
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Specifications
Mounting Style: Through Hole
Package/Case: TO-204-2
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 60 V
Collector- Base Voltage VCBO: 100 V
Emitter- Base Voltage VEBO: 7 V
Collector-Emitter Saturation Voltage: 3 V
Maximum DC Collector Current: 15 A
Pd - Power Dissipation: 115 W
Gain Bandwidth Product fT: 2.5 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 200 C
DC Collector/Base Gain hFE Min: 20
Type: BJTs - Bipolar Transistors
Technology: Si
Height: 8.51 mm
Length: 39.37 mm
Width: 26.67 mm
Unit Weight: 12 g
