Transistor IGBT 650v 60A 600w TO-3PN FGA60N65SMD onsemi
Προβολή
Specifications
Package/Case: TO-3PN
Mounting Style: Through Hole
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.9 V
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 120 A
Pd - Power Dissipation: 600 W
Gate-Emitter Leakage Current: 400 nA
Νέο
-21%
Κατόπιν Παραγγελίας
Ref Code: 038417
Κολλητήρι σταθμού 65w ap-65a ( με μύτη T900-B ) ( AT-989D, AT-989 )..
33,50€ 26,52€
Χωρίς ΦΠΑ:21,39€
Χωρίς ΦΠΑ:21,39€
