MOSFET IRFBG30PBF 1000V Single N-Channel HEXFET
-23%
Προβολή
Specifications
Id - Continuous Drain Current: 3.1 A
Vds - Drain-Source Breakdown Voltage: 1000 V
Rds On - Drain-Source Resistance: 5 Ohms
Transistor Polarity: N-Channel
Vgs - Gate-Source Breakdown Voltage: 20 V
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 125 W
Mounting Style: Through Hole
Package/Case: TO-220-3
Packaging: Tube
Channel Mode: Enhancement
Configuration: Single
Fall Time: 20 ns
Minimum Operating Temperature: - 55 C
Rise Time: 25 ns
Typical Turn-Off Delay Time: 89 ns
Typical Turn-On Delay Time: 12 ns
Id - Continuous Drain Current: 3.1 A
Vds - Drain-Source Breakdown Voltage: 1000 V
Rds On - Drain-Source Resistance: 5 Ohms
Transistor Polarity: N-Channel
Vgs - Gate-Source Breakdown Voltage: 20 V
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 125 W
Mounting Style: Through Hole
Package/Case: TO-220-3
Packaging: Tube
Channel Mode: Enhancement
Configuration: Single
Fall Time: 20 ns
Minimum Operating Temperature: - 55 C
Rise Time: 25 ns
Typical Turn-Off Delay Time: 89 ns
Typical Turn-On Delay Time: 12 ns
Νέο
-12%
Κατόπιν Παραγγελίας
Ref Code: 038444
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